BAV23CL, NSVBAV23CL
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
SINGLE HEATED
Total Device Dissipation (Note 1) TA
= 25
°C
Derate above 25°C
PD
265
2.1
mW
mW/°C
Thermal Resistance, Junction?to?Ambient (Note 1)
RJA
472
°C/W
Thermal Reference, Junction?to?Anode Lead (Note 1)
R_ψJL
263
°C/W
Thermal Reference, Junction?to?Case (Note 1)
R_ψJC
289
°C/W
Total Device Dissipation (Note 2) TA
= 25
°C
Derate above 25°C
PD
345
2.7
mW
mW/°C
Thermal Resistance, Junction?to?Ambient (Note 2)
RJA
362
°C/W
Thermal Reference, Junction?to?Anode Lead (Note 2)
R_ψJL
251
°C/W
Thermal Reference, Junction?to?Case (Note 2)
R_ψJC
250
°C/W
DUAL HEATED
(Note 3)
Total Device Dissipation (Note 1) TA
= 25
°C
Derate above 25°C
PD
390
3.1
mW
mW/°C
Thermal Resistance, Junction?to?Ambient (Note 1)
RJA
321
°C/W
Thermal Reference, Junction?to?Anode Lead (Note 1)
R_ψJL
159
°C/W
Thermal Reference, Junction?to?Case (Note 1)
R_ψJC
138
°C/W
Total Device Dissipation (Note 2) TA
= 25
°C
Derate above 25°C
PD
540
4.3
mW
mW/°C
Thermal Resistance, Junction?to?Ambient (Note 2)
RJA
231
°C/W
Thermal Reference, Junction?to?Anode Lead (Note 2)
R_ψJL
148
°C/W
Thermal Reference, Junction?to?Case (Note 2)
R_ψJC
119
°C/W
Junction and Storage Temperature Range
TJ, Tstg
?55 to +150
°C
1. FR-4 @ 100 mm2, 1 oz. copper traces, still air.2
, 2 oz. copper traces, still air.
2. FR-4 @ 500 mm
3. Dual heated values assume total power is sum of two equally powered channels
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR
= 200 Vdc)
(VR
= 200 Vdc, T
J
= 150
°C)
IR
?
?
0.1
100
Adc
Reverse Breakdown Voltage
(IBR
= 100
Adc)
V(BR)
250
?
Vdc
Forward Voltage
(IF
= 100 mAdc)
(IF
= 200 mAdc)
VF
?
?
1000
1250
mV
Diode Capacitance
(VR
= 0, f = 1.0 MHz)
CT
?
5.0
pF
Reverse Recovery Time
(IF
= I
R
= 30 mAdc, R
L
= 100
)
trr
?
150
ns
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